2SK879-O(2003) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK879-O Datasheet PDF : 4 Pages
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK879
General Purpose and Impedance Converter and
Condenser Microphone Applications
2SK879
Unit: mm
· High breakdown voltage: VGDS = −50 V
· High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
· Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz)
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
Unit
-50
V
10
mA
100
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
V (BR) GDS
VGS = -30 V, VDS = 0
VDS = 0, IG = -100 mA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF) VDS = 10 V, ID = 0.1 mA
ïYfsï
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
Crss
VGD = -10 V, ID = 0, f = 1 MHz
NF
VDS = 15 V, VGS = 0
RG = 100 kW, f = 120 Hz
¾
¾ -1.0 nA
-50
¾
¾
V
0.3
¾
6.5 mA
-0.4
¾ -5.0
V
1.2
¾
¾
mS
¾
8.2
¾
pF
¾
2.6
¾
pF
¾
0.5
¾
dB
Note: IDSS classification R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Marking
1
2003-03-27
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