2SK4147 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SK4147

SWITCHING N-CHANNEL MOSFET

Renesas Electronics 

2SK4147

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = 250 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

Gate to Source Cut-off Voltage

Forward Transfer Admittance Note

Drain to Source On-state Resistance Note

VGS(off)

| yfs |

RDS(on)1

VDS = 10 V, ID = 1 mA

VDS = 10 V, ID = 0.25 A

VGS = 10 V, ID = 0.25 A

RDS(on)2

VGS = 4.5 V, ID = 0.25 A

RDS(on)3

VGS = 4 V, ID = 0.25 A

Input Capacitance

Ciss

VDS = 10 V,

Output Capacitance

Coss

VGS = 0 V,

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 125 V, ID = 0.25 A,

Rise Time

tr

VGS = 10 V,

Turn-off Delay Time

td(off)

RG = 10 Ω

Fall Time

tf

Total Gate Charge

QG

VDD = 200 V,

Gate to Source Charge

QGS

VGS = 10 V,

Gate to Drain Charge

Body Diode Forward Voltage Note

QGD

VF(S-D)

ID = 0.5 A

IF = 0.5 A, VGS = 0 V

Reverse Recovery Time

trr

IF = 0.5 A, VGS = 0 V,

Reverse Recovery Charge

Qrr

di/dt = 100 A/μs

Note Pulsed

MIN.

1.0

0.55

TYP.

1.9

3.6

3.6

3.6

120

18

7

5.5

6

16.5

32

5.5

1

2

0.84

55

54

MAX.

10

±10

2.5

4.5

5.2

6.0

1.5

UNIT

μA

μA

V

S

Ω

Ω

Ω

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 μs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

10%

0

VDS

90%

VDS

VDS

Wave Form

0

td(on)

VGS 90%

90%

10% 10%

tr td(off) tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D18741EJ1V0DS

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