2SK4147 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
2SK4147 Datasheet PDF : 8 Pages
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2SK4147
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
ID = 0.25 A
Pulsed
6
VGS = 4.5 V
10 V
4
2
0
-75 -25
25
75 125 175
Tch − Channel Temperature − °C
SWITCHING CHARACTERISTICS
100
tf
VDD = 125 V
VGS = 10 V
RG = 10 Ω
td(off)
10
tr
td(on)
1
0.1
1
10
ID − Drain Current − A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
1
VGS = 10 V
0.1
0V
0.01
0.001
0
0.2 0.4 0.6 0.8
Pulsed
1 1.2
VF(S-D) − Source to Drain Voltage − V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
10
VGS = 0 V
f = 1 MHz
1
0.1
1
Crss
10
100
1000
VDS − Drain to Source Voltage − V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
240
12
200
VDD = 200 V
10
125 V
160
50 V
8
120
6
80
VGS
4
40
0
0
2
VDS
ID = 0.5 A
0
1
2
3
4
5
6
QG − Gate Charge − nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/μs
VGS = 0 V
100
10
0.1
1
10
IF − Diode Forward Current − A
Data Sheet D18741EJ1V0DS
5
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