30N20G-TF2-T View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
30N20G-TF2-T Datasheet PDF : 3 Pages
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30N20
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
200
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
30
A
Pulsed
IDM
124
A
Avalanche Current
IAR
30
A
Avalanche Energy
Single Pulsed
EAS
Repetitive
EAR
640
mJ
18
mJ
Power Dissipation
PD
42
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=200V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=15A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
V =0V, V =25V, f=1MHz www.DataSheet.net/
GS
DS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
QG
QGS
VDD=50V, VGS=10V , ID=1.3A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=30V, ID=0.5A, RG=25Ω,
VGS=0~10V
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=30A, VGS=0V
MIN TYP MAX UNIT
200
V
1 μA
+100 nA
-100 nA
3
5V
75 mΩ
2400 3100 pF
430 560 pF
55 70 pF
60 78 nC
17
nC
27
nC
40
ns
280
ns
125
ns
115
ns
30 A
124 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
VER.a
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