MC33399D View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

Manufacturer

MC33399D

Local Interconnect Network (LIN) Physical Interface

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics (continued)

Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical

values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

LIN PIN (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE)

Low-Level Bus Voltage (Dominant State)

TXD LOW, VLIN = 40 mA

High-Level Voltage (Recessive State)

TXD HIGH, IOUT = 1.0 µA

Internal Pullup Resistor to VSUP (4)

- 40°C ≤ TA ≤ 70°C

70°C < TA ≤ 125°C

Current Limitation

TXD LOW, VLIN = VSUP

Leakage Current to GND

Recessive State, VSUP - 0.3 V ≤ VLIN ≤ VSUP (4)

VSUP Disconnected, -18 V ≤ VLIN ≤ 18 V (Excluding Internal Pullup

Source)

VSUP Disconnected, VLIN = -18 V (Including Internal Pullup Source)

VSUP Disconnected, VLIN = +18 V (Including Internal Pullup Source)

LIN Receiver, Low-Level Input Voltage

TXD HIGH, RXD LOW

LIN Receiver, High-Level Input Voltage

TXD HIGH, RXD HIGH

LIN Receiver Threshold Center

(VLINH - VLINL) / 2

LIN Receiver Input Voltage Hysteresis

VLINH - VLINL

LIN Wake-Up Threshold Voltage

INH OUTPUT PIN

VDOM

VREC

RPU

I LIM

I LEAK

0.0

—

0.85 VSUP

—

20

30

35

49

50

150

0.0

—

- 40

—

V

1.4

V

—

kΩ

47

60

mA

200

µA

10

40

—

- 600

—

—

15

—

V LINL

V LINH

V LINTH

0 VSUP

V

—

0.4 VSUP

0.6 VSUP

—

V

VSUP

V

—

VSUP/2

—

V LINHYS

V

0.05 VSUP

—

0.15 VSUP

V LINWU

3.5

4.5

6.0

V

High-Level Voltage (Normal Mode)

Leakage Current (Sleep Mode)

0 < VINH < VSUP

VWUH

VSUP - 0.8

—

I LEAK

0

—

VSUP

V

µA

5.0

WAKE INPUT PIN

Typical Wake-Up Threshold (EN = 0 V, 7.0 V ≤ VSUP ≤ 18 V) (5)

HIGH-to-LOW Transition

LOW-to-HIGH Transition

Wake-Up Threshold Hysteresis

WAKE Input Current

VWAKE ≤ 14 V

VWAKE > 14 V

VWUTH

VWUHYS

I WU

V

0.3 VSUP 0.43 VSUP 0.55 VSUP

0.4 VSUP 0.55 VSUP 0.65 VSUP

0.1 VSUP 0.16 VSUP 0.2 VSUP

V

µA

—

1.0

5.0

—

—

100

Notes

4. A diode structure is inserted with the pullup resistor to avoid parasitic current path from LIN to VSUP.

5. When VSUP is greater than 18 V, the wake-up voltage thresholds remain identical to the wake-up thresholds at 18 V.

33399

Analog Integrated Circuit Device Data

6

Freescale Semiconductor

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