4N65 View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

4N65

4A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

4N65

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

650

V

Gate-Source Voltage

VGSS

±30

V

Avalanche Current (Note 2)

IAR

4.4

A

Drain Current

Continuous

ID

Pulsed (Note 2)

IDM

4.0

A

16

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

Repetitive (Note 2)

EAR

260

mJ

10.6

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220/TO-262/TO-263

106

TO-220F/TO-220F1

Power Dissipation

TO-220F2

PD

36

W

38

TO-251/ TO-252

50

Junction Temperature

TJ

+150

°С

Operating Temperature

TOPR

-55 ~ +150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

PACKAGE

TO-220/TO-262/TO-263

TO-220F/TO-220F1

TO-220F2

TO-251/ TO-252

TO-220/TO-262/TO-263

TO-220F/TO-220F1

TO-220F2

TO-251/ TO-252

SYMBOL

θJA

θJc

RATINGS

62.5

62.5

62.5

83

1.18

3.47

3.28

2.5

UNIT

°С/W

°С/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 8

QW-R502-397.F

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