DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

50N06-TN3-R View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
Manufacturer
50N06-TN3-R
UTC
Unisonic Technologies UTC
50N06-TN3-R Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
50N06
„ TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs.
Junction Temperature
1.2
1.1
1.0
0.9
0.8
-100 -50 0
*Note:
1. VGS=0V
2. ID=250µA
50 100 150 200
Junction Temperature, TJ (°C)
Maximum Safe Operating
103 Operation in This
Area by RDS (on)
102
100µs
1ms
10ms
101
10ms
100
*Note:
1. Tc=25°C
2. TJ=150°C
10-1 3. Single Pulse
10-1
100
101
102
Drain-Source Voltage, VDS (V)
Power MOSFET
On-Resistance Variation vs.
Junction Temperature
3.0
2.5
2.0
1.5
1.0
*Note:
0.5
1. VGS=10V
0.0
2. ID=25A
-50 0 50 100 150
Junction Temperature, TJ (°C)
Maximum Drain Current vs.
Case Temperature
50
40
30
20
10
0
25 50
75 100 125 150
Case Temperature, TC (°C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-088.E

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]