MMBV3700LT1 View Datasheet(PDF) - Leshan Radio Company

Part Name

Description

Manufacturer

MMBV3700LT1

Silicon Pin Diode

Leshan Radio Company 

LESHAN RADIO COMPANY, LTD.

Silicon Pin Diode

These devices are designed primarily for VHF band switching appli-

cations but are also suitable for use in general–purpose switching

circuits. They are supplied in a cost–effective plastic package for

economical, high–volume consumer and industrial requirements. They

are also available in surface mount.

• Long Reverse Recovery Time

t rr = 300 ns (Typ)

• Rugged PIN Structure Coupled with Wirebond

Construction for Optimum Reliability

• Low Series Resistance @ 100 MHz —

R S = 0.7 Ohms (Typ) @ I F = 10 mAdc

• Reverse Breakdown Voltage = 200 V (Min)

3

CATHODE

1

ANODE

MMBV3700LT1

SILICON PIN

SWITCHING DIODE

3

1

2

CASE 318–08, STYLE8

SOT– 23 (TO–236AB)

MAXIMUM RATINGS(EACH DIODE)

Rating

Symbol M V 2 1 X X MMBV21XXLT1 Unit

Reverse Voltage

Device Dissipation @T A = 25°C

Derate above 25°C

VR

200

Vdc

PD

280

200

mW

2.8

2.0

mW/°C

Junction Temperature

Storage Temperature Range

DEVICE MARKING

TJ

+150

°C

T stg

–55 to +150

°C

MMBV3700LT1=4R

ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Reverse Breakdown Voltage

(IR=10µAdc)

Diode Capacitance

(VR=20 Vdc,f=1.0MHz)

Series Resistance(figure5)

(IF=10mAdc)

Reverse Leakage Current

(VR=150Vdc)

Reverse Recovery Time

(IF=IR=10mAdc)

V (BR)R

200

—

CT

—

—

RS

—

0.7

IR

—

—

t rr

—

300

Max

—

1.0

1.0

0.1

—

Unit

Vdc

pF

Ω

µAdc

ns

I9–1/2

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