5LN01SP View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

5LN01SP

N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

ON Semiconductor 

5LN01SP

Ordering number : ENN6559

N-Channel Silicon MOSFET

5LN01SP Ultrahigh-Speed Switching Applications

Features

• Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2180

[5LN01SP]

4.0

2.2

0.4

0.5

0.4

0.4

Specifications

Absolute Maximum Ratings at Ta=25°C

123

1.3

1.3

3.0

3.8nom

1 : Source

2 : Drain

3 : Gate

SANYO : SPA

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

Tch

Tstg

Electrical Characteristics at Ta=25°C

Conditions

PW≤10µs, duty cycle≤1%

Ratings

Unit

50

V

±10

V

0.1

A

0.4

A

0.25

W

150

°C

--55 to +150

°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Marking : YB

Symbol

Conditions

V(BR)DSS

IDSS

IGSS

VGS(off)

yfs

ID=1mA, VGS=0

VDS=50V, VGS=0

VGS=±8V, VDS=0

VDS=10V, ID=100µA

VDS=10V, ID=50mA

min

50

0.4

0.13

Ratings

Unit

typ

max

V

10

µA

±10

µA

1.3

V

0.18

S

Continued on next page.

© 2011, SCILLC. All rights reserved.

Jan-2011, Rev. 0

Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com

Publication Order Number:

5LN01SP/D

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