5LN01SP View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

5LN01SP

N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

ON Semiconductor 

5LN01SP

Continued from preceding page.

Parameter

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=50mA, VGS=4V

ID=30mA, VGS=2.5V

ID=10mA, VGS=1.5V

VDS=10V, f=1MHz

VDS=10V, f=1MHz

VDS=10V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

VDS=10V, VGS=10V, ID=100mA

VDS=10V, VGS=10V, ID=100mA

VDS=10V, VGS=10V, ID=100mA

IS=100mA, VGS=0

Switching Time Test Circuit

4V VIN

0V

VIN

PW=10µs

D.C.≤1%

VDD=25V

ID=50mA

RL=500Ω

D

VOUT

G

5LN01SP

P.G

50Ω

S

Ratings

Unit

min

typ

max

6

7.8

Ω

7.1

9.9

Ω

10

20

Ω

6.6

pF

4.7

pF

1.7

pF

18

ns

42

ns

190

ns

105

ns

1.57

nC

0.20

nC

0.32

nC

0.85

1.2

V

ID -- VDS

0.10

0.20

3.5V

0.09

0.08

4.0V

2.5V2.0V

0.18

0.16

0.07

0.14

VGS=1.5V

0.06

0.12

0.05

0.10

0.04

0.08

0.03

0.06

0.02

0.04

0.01

0

0

12

11

0.2

0.4

0.6

0.8

1.0

Drain-to-Source Voltage, VDS -- V IT00054

RDS(on) -- VGS

Ta=25°C

10

9

8

50mA

7 ID=30mA

6

5

4

3

2

0

1

234

5

67

8

9 10

Gate-to-Source Voltage, VGS -- V IT00056

0.02

0

0

100

7

5

3

2

10

7

5

3

2

1.0

0.01

Rev.0 I Page 2 of 4 I www.onsemi.com

ID -- VGS

VDS=10V

0.5

1.0

1.5

2.0

2.5

3.0

Gate-to-Source Voltage, VGS -- V

RDS(on) -- ID

IT00055

VGS=4V

Ta=75°C

25°C

--25°C

2

3

5 7 0.1

Drain Current, ID -- A

2

3

IT00057

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