70N06-TA3-T View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
70N06-TA3-T Datasheet PDF : 8 Pages
| |||
70N06
MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage
Continuous Source Current
VSD
IS = 70A, VGS = 0 V
Integral Reverse p-n Junction Diode in
IS
the MOSFET
D
MAX UNIT
1.4 V
70
Pulsed Source Current
ISM
G
A
280
S
Reverse Recovery Time
tRR
IS = 70A, VGS = 0 V
Reverse Recovery Charge
QRR dIF / dt = 100 A/µs
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=19.5mH, IAS=70A, RG=20Ω, Starting TJ=25℃
3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%
5. Essentially independent of operating temperature.
90
ns
300
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-089,A
Share Link: 