74HCT2G125DP View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
74HCT2G125DP Datasheet PDF : 20 Pages
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Philips Semiconductors
Dual buffer/line driver; 3-state
Product specification
74HC2G125; 74HCT2G125
Type 74HCT2G125
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
Tamb = −40 to +85 °C
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
VOH
HIGH-level output voltage
VOL
LOW-level output voltage
ILI
input leakage current
IOZ
3-state output OFF current
ICC
quiescent supply current
∆ICC
additional supply current per input
Tamb = −40 to +125 °C
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
VOH
HIGH-level output voltage
VOL
LOW-level output voltage
ILI
IOZ
ICC
∆ICC
input leakage current
3-state output OFF current
quiescent supply current
additional supply current per input
TEST CONDITIONS
OTHER
VCC (V)
MIN.
VI = VIH or VIL
IO = −20 µA
IO = −6.0 mA
VI = VIH or VIL
IO = 20 µA
IO = 6.0 mA
VI = VCC or GND
VI = VIH or VIL;
VO = VCC or GND
VI = VCC or GND;
IO = 0
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
4.5 to 5.5
2.0
−
4.4
4.13
−
−
−
−
−
−
4.5 to 5.5 2.0
4.5 to 5.5 −
VI = VIH or VIL
IO = −20 µA
4.5
4.4
IO = −6.0 mA 4.5
3.7
VI = VIH or VIL
IO = 20 µA
4.5
−
IO = 6.0 mA
4.5
−
VI = VCC or GND 5.5
−
VI = VIH or VIL;
5.5
−
VO = VCC or GND
VI = VCC or GND; 5.5
−
IO = 0
VI = VCC − 2.1 V; 4.5 to 5.5 −
IO = 0
TYP.(1) MAX. UNIT
1.6
−
V
1.2
0.8
V
4.5
−
V
4.32 −
V
0
0.1
V
0.15 0.33 V
−
±1.0 µA
−
±5.0 µA
−
10
µA
−
375 µA
−
−
V
−
0.8
V
−
−
V
−
−
V
−
0.1
V
−
0.4
V
−
±1.0 µA
−
±10.4 µA
−
20
µA
−
410 µA
Note
1. All typical values are measured at Tamb = 25°C.
2003 Mar 03
8
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