74HC2G125DC View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
74HC2G125DC Datasheet PDF : 14 Pages
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NXP Semiconductors
74HC2G125; 74HCT2G125
Dual buffer/line driver; 3-state
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C.
Symbol Parameter
Conditions
Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit
Min Typ Max
Min
Max
ICC
supply current VI = VCC or GND; IO = 0 A;
-
-
10
-
VCC = 6.0 V
CI
input capacitance
-
1.0
-
-
CO
output
capacitance
-
1.5
-
-
20
µA
-
pF
-
pF
74HCT2G125
VIH
HIGH-level input VCC = 4.5 V to 5.5 V
voltage
2.0 1.6
-
2.0
-
V
VIL
LOW-level input VCC = 4.5 V to 5.5 V
voltage
-
1.2 0.8
-
0.8
V
VOH
HIGH-level
VI = VIH or VIL; VCC = 4.5 V
output voltage
IO = −20 µA
4.4 4.5
-
4.4
IO = −6.0 mA
3.84 4.32
-
3.7
VOL
LOW-level output VI = VIH or VIL; VCC = 4.5 V
voltage
IO = 20 µA
-
0
0.1
-
IO = 6.0 mA
-
0.16 0.33
-
II
input leakage
VI = VCC or GND; VCC = 5.5 V
-
-
±1.0
-
current
-
V
-
V
0.1
V
0.4
V
±1.0 µA
IOZ
OFF-state output VI = VIH or VIL; VO =
current
VCC or GND; VCC = 5.5 V
-
-
±5.0
-
ICC
supply current VI = VCC or GND; IO = 0 A;
-
-
10
-
VCC = 5.5 V
∆ICC
additional supply per input; VCC = 4.5 V to 5.5 V; -
-
375
-
current
VI = VCC − 2.1 V; IO = 0 A
CI
input capacitance
-
1.0
-
-
CO
output
capacitance
-
1.5
-
-
±10
20
µA
410
µA
-
pF
-
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit see Figure 8.
Symbol Parameter Conditions
Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit
Min Typ[1] Max
Min
Max
74HC2G125
tpd
propagation nA to nY; see Figure 6
delay
VCC = 2.0 V
[2]
-
35
115
-
135
ns
VCC = 4.5 V
-
11
23
-
27
ns
VCC = 5.0 V; CL = 15 pF
-
10
-
-
-
ns
VCC = 6.0 V
-
8
20
-
23
ns
74HC_HCT2G125_4
Product data sheet
Rev. 04 — 4 July 2008
© NXP B.V. 2008. All rights reserved.
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