74HCT2G32(2009) View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
74HCT2G32 Datasheet PDF : 13 Pages
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NXP Semiconductors
74HC2G32; 74HCT2G32
Dual 2-input OR gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
CI
input
capacitance
74HCT2G32
VIH
HIGH-level VCC = 4.5 V to 5.5 V
input voltage
VIL
LOW-level VCC = 4.5 V to 5.5 V
input voltage
VOH
VOL
II
ICC
∆ICC
CI
HIGH-level VI = VIH or VIL; VCC = 4.5 V
output voltage IO = −20 µA
IO = −4.0 mA
LOW-level
VI = VIH or VIL; VCC = 4.5 V
output voltage IO = 20 µA
IO = 4.0 mA
input leakage VI = VCC or GND;
current
VCC = 5.5 V
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
additional
per input;
supply current VCC = 4.5 V to 5.5 V;
VI = VCC − 2.1 V; IO = 0 A
input
capacitance
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min
Max
Min
Max
- 1.5 -
-
-
-
-
pF
2.0 1.6 -
2.0
-
2.0
-
V
- 1.2 0.8
-
0.8
-
0.8 V
4.4 4.5 -
4.4
-
4.4
4.18 4.32 - 4.13
-
3.7
-
0 0.1
-
0.1
-
- 0.15 0.26 -
0.33
-
-
- ±0.1 -
±1.0
-
-
- 1.0
-
10
-
-
- 300 -
375
-
-
V
-
V
0.1 V
0.4 V
±1.0 µA
20 µA
410 µA
- 1.5 -
-
-
-
-
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
74HC2G32
tpd
propagation nA, nB to nY; see Figure 6 [1]
delay
VCC = 2.0 V
- 24 75
-
95
-
110 ns
VCC = 4.5 V
- 9.0 15
-
19
-
22 ns
VCC = 6.0 V
- 7.0 13
-
16
-
20 ns
tt
transition nY; see Figure 6
time
VCC = 2.0 V
[2]
- 18 75
-
95
-
125 ns
VCC = 4.5 V
-
6 15
-
19
-
25 ns
VCC = 6.0 V
5 13
-
16
-
20 ns
CPD
power
per buffer;
[3] -
10
-
-
-
-
-
pF
dissipation CL = 50 pF; fi = 1 MHz;
capacitance VI = GND to VCC
74HC_HCT2G32_3
Product data sheet
Rev. 03 — 12 May 2009
© NXP B.V. 2009. All rights reserved.
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