7MBR75U2B060 View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
7MBR75U2B060 Datasheet PDF : 7 Pages
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IGBT Module
7MBR75U2B060
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
80
VGE=20V 15V 12V
60
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
80
VGE=20V 15V
12V
60
40
10V
20
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
80
60
Tj=25°C
Tj=125°C
40
20
0
0
1
2
3
4
Collector-Emitter voltage : VCE [ V ]
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
10.00
Cies
1.00
Coes
Cres
0.10
0.01
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
40
20
0
0
10V
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
2
0
5
500
Ic=60A
Ic=30A
Ic=15A
10
15
20
Gate - Emitter voltage : VGE [ V ]
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=30A, Tj= 25°C
25
25
400
20
300
15
VGE
200
10
100
0
0
VCE
40
80
120
Gate charge : Qg [ nC ]
5
0
160
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