XP133A0245SR(V2) View Datasheet(PDF) - TOREX SEMICONDUCTOR

Part Name

Description

Manufacturer

XP133A0245SR
(Rev.:V2)

Power MOSFET

TOREX SEMICONDUCTOR 

XP131A1715SR

■Typical Performance Characteristics

DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE

40

5V

35

4V

30

25

3V

2.5V

2V

Pulse Test, Ta=25℃

1.5V

DRAIN CURRENT vs. GATE-SOURCE VOLTAGE

Pulse Test

40

35

30

25

20

20

15

10

5

Vgs=1V

0

0

0.5

1

1.5

2

2.5

3

Drain-Source Voltage:Vds (V)

15

125℃

Topr=25℃

10

5

-55℃

0

0

0.5

1

1.5

2

2.5

3

Gate-Source Voltage:Vgs (V)

DRAIN-SOURCE ON-STATE RESISTANCE

vs. GATE-SOURCE VOLTAGE

0.03

Pulse Test, Ta=25℃

DRAIN-SOURCE ON-STATE RESISTANCE

vs. DRAIN CURRENT

Pulse Test, Ta=25℃

0.1

0.025

0.02

0.015

0.01

Id=10A

5A

0.01

Vgs=1.5V

2.5V

4.5V

0.005

0

0

1

2

3

4

5

Gate-Source Voltage:Vgs (V)

0.001

0

10

20

30

40

Drain Current:Id (A)

DRAIN-SOURCE ON-STATE RESISTANCE

GATE-SOURCE CUT-OFF VOLTAGE VARIANCE

vs. AMBIENT TEMPERATURE

0.03

Pulse Test

0.6

vs. AMBIENT TEMPERATURE

Pulse Test，Ta=25℃

11

0.025

0.4

0.02

Id=5A

0.2

Vgs=1.5V

5A, 10A

1.5A

0.015

0

2.5V

0.01

0.005

-0.2

5A, 10A

4.5V

-0.4

0

-50 -25 0 25 50 75 100 125 150

Ambient Temp. :Topr (℃)

-0.6

-50 -25 0 25 50 75 100 125 150

Ambient Temp. :Topr (℃)

713

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