8N65 View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

8N65

8A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

8N65

„ TYPICAL CHARACTERISTICS

On-State Characteristics

100

VGS

Top: 15.0V

10.0V

10

8.0V

7.0V

6.5V

6.0V

5.5 V

Bottorm:5.0V

1

5.0V

0.1

Notes:

1. 250µs Pulse Test

2. TC=25°C

0.1

1

10

Drain-to-Source Voltage, VDS (V)

On-Resistance Variation vs. Drain

Current and Gate Voltage

6

TJ=25°C

5

VGS=10V

4

3

2

VGS=20V

1

0

0

5

10

15

20

Drain Current, ID (A)

1900

1700

1500

1300

Capacitance Characteristics

(Non-Repetitive)

Ciss=Cgs+Cgd (Cds=shorted)

Coss=Cds+Cgd Crss=Cgd

Ciss

1100

900

700

Coss

Crss

500

300 Notes:

100 1. VGS=0V

0 2. f = 1MHz

0.1

1

10

Drain-SourceVoltage, VDS (V)

UNISONIC TECHNOLOGIES CO., LTD

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Power MOSFET

Transfer Characteristics

10

150°C

1

25°C

Notes:

1. VDS=40V

0.1

2. 250µs Pulse Test

2

4

6

8

10

Gate-Source Voltage, VGS (V)

Body Diode Forward Voltage vs. Source

Current

10

150°C

25°C

1

Notes:

1. VGS=0V

0.1

2. 250µs Test

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Source-Drain Voltage, VSD (V)

Gate Charge Characteristics

12

ID=7.5A

10

VDS=520V

8

VDS=300V

VDS=120V

6

4

2

0

0 5 10 15 20 25 30

Total Gate Charge, QG (nC)

6 of 8

QW-R502-591.C

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