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RMWP26001 View Datasheet(PDF) - Raytheon Company

Part Name
Description
Manufacturer
RMWP26001
Raytheon
Raytheon Company Raytheon
RMWP26001 Datasheet PDF : 6 Pages
1 2 3 4 5 6
RMWP26001
24-26.5 GHz Power Amplifier MMIC
Description
PRODUCT INFORMATION
The RMWP26001 is a 4-stage GaAs MMIC amplifier designed as a 24 to 26.5 GHz Power Amplifier for use in point
to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 26 GHz
transmit/receive chipset. The RMWP26001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of power amplifier applications.
Features
4 mil substrate
Small-signal gain 23 dB (typ.)
1dB compressed Pout 24 dBm (typ.)
Chip size 2.85 mm x 1.2 mm
Absolute
Maximum
Ratings
Parameter
Positive DC voltage (+4V Typical)
Negative DC voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
ID
PIN
TC
Tstg
Rjc
Value
+6
-2
8
531
+8
-30 to +85
-55 to +125
41.5
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics Parameter
Min Typ Max Unit Parameter
Min Typ Max Unit
(At 25°C), Frequency Range
24
50 system, Gate Supply Voltage1 (Vg)
26.5 GHz Drain Current at
-0.3
V
1dB Compression
400
mA
Vd=+4 V, Gain Small Signal at
Quiescent Current
Pin= -8 dBm
20 23
Idq=370 mA Gain Variation vs. Frequency
1
Drain Current at Saturated:
dB
Pin=+2 dBm
380
mA
dB Power Added Efficiency
Gain at 1 dB Compression
22
dB
(PAE): at P1dB
16
%
Power Output at
1 dB Compression
Input Return Loss
24
dBm
(Pin=-8 dBm)
12
dB
Power Output Saturated:
Pin=+2 dBm
22 25
Output Return Loss
dBm
(Pin=-8 dBm)
12
dB
Drain Current at
OIP3
33
dBm
Pin=-8 dBm
370
mA
www.raytheon.com/micro
Notes:
1. Typical range of gate voltage is -0.7 to -0.05 V to set Idq of 370 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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