RMWP26001 View Datasheet(PDF) - Raytheon Company
Part Name
Description
Manufacturer
RMWP26001 Datasheet PDF : 6 Pages
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RMWP26001
24-26.5 GHz Power Amplifier MMIC
Figure 3
Recommended
Application Schematic
Circuit Diagram
Drain Supply
Vd=+4 V
10 µF
10,000pF
L
PRODUCT INFORMATION
L = Bond Wire Inductance
100pF L
100pF
L
L
100pF
L 100pF
L
L
L
L
MMIC Chip
RF IN
RF OUT
Figure 4
Recommended
Assembly Diagram1
Ground
(Back of Chip)
L
100pF
Gate Supply
Vg
Vd
(Positive)
10µF
10,000pF
RF
Input
100pF
5mil Thick
Alumina
50-Ohm
100pF
100pF
Die-Attach
80Au/20Sn
100pF
5 mil Thick
Alumina
50-Ohm
RF
Output
www.raytheon.com/micro
100pF
2 mil Gap
Vg
(Negative)
L< 0.015”
Note:
(4 Places)
1. Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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