PTB20038 View Datasheet(PDF) - Ericsson
Part Name
Description
Manufacturer
PTB20038 Datasheet PDF : 2 Pages
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PTB 20038
25 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20038 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz frequency
band. Rated at 25 watts minimum output power, it may be used for
both CW and PEP applications. It is specifically designed for high
efficiency operation at average power levels around 10 watts with
high PEP capacity. Ion implantation, nitride surface passivation and
gold metallization are used to ensure excellent device reliability. 100%
lot traceability is standard.
Typical Output Power vs. Input Power
40
35
30
25
20
15
VCC = 25 V
10
ICQ = 100 mA
5
f = 900 MHz
0
0
1
2
3
4
5
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
25 Watts, 860–900 MHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
20038 LOT CODE
Package 20200
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
50
4.0
6.7
65
0.37
–40 to +150
2.7
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
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