AH212 View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
AH212 Datasheet PDF : 5 Pages
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AH212
The Communications Edge TM
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Information
Product Features
Product Description
Functional Diagram
x 1800 – 2200 MHz
x 26 dB Gain
x +30 dBm P1dB
x +46 dBm Output IP3
x +5V Single Positive Supply
x Internal Active Bias
The AH212 is a high dynamic range two-stage driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve superior performance
for various narrowband-tuned application circuits with up
to +46 dBm OIP3 and +30 dBm of compressed 1-dB
power. The amplifier is housed in an industry-standard
SMT lead-free/green/RoHS-compliant SOIC-8 package.
All devices are 100% RF and DC tested.
x Lead-free/green/RoHS-compliant
SOIC-8 Package
Applications
x Mobile Infrastructure
The product is targeted for use as linear driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH212 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Vc1 1
8 N/C
Vbias1 2
7 Vcc2 / RF Out
RF In 3
6 Vcc2 / RF Out
Vbias2 4
5 N/C
AH212-S8G
Function
Vc1
Input
Output
Vbias1
Vbias2
Vcc2
GND
N/C or GND
Pin No.
1
3
6, 7
2
4
6, 7
Backside Paddle
5, 8
Specifications (1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Noise Figure
W-CDMA Channel Power
@ -45 dBc ACLR
Operating Current Range , Icc
Device Voltage, Vcc
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
dBm
mA
V
Min
1800
Typ
2140
25
25
9
+29.5
+46
6.0
+21
400
5
Max
2200
1. Test conditions unless otherwise noted: 25ºC, +5V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance (1)
Parameters
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
W-CDMA Channel Power
@ -45 dBc ACLR
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
1960
2140
25.8
25.0
15
25
11
9
+30
+29.5
+48.5
+46
+23.5
+21
5.5
6.0
+5 V @ 400 mA
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85 qC
-65 to +150 qC
+26 dBm
+7 V
900 mA
6W
+250 ºC
Ordering Information
Part No.
AH212-S8G
Description
1 Watt, High Gain InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Package)
AH212-S8PCB1960 1960 MHz Evaluation Board
AH212-S8PCB2140 2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 5 November 2005
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