PDM41257 View Datasheet(PDF) - Paradigm Technology
Part Name
Description
Manufacturer
PDM41257 Datasheet PDF : 7 Pages
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PDM41257
Low VCC Data Retention Waveform
Data Retention Mode
1
V CC
VIH
CE VIL
t CDR
4.5V
VDR
VDR
4.5V
tR
2
DON'T CARE
3
Data Retention Electrical Characteristics (LA Version Only)
Symbol Parameter
Test Conditions
Min.
Typ. Max. Unit
4
VDR
VCC for Retention Data
2
—
—
V
ICCDR Data Retention Current
CE ≥ VCC – 0.2V
VIN ≥ VCC – 0.2V
or ≤ 0.2V
VCC = 2V
VCC = 3V
—
95
500 µA
—
350
750 µA
5
tCDR
Chip Deselect to Data Retention Time
0
—
—
ns
tR(4)
Operation Recovery Time
NOTES: (For three previous Electrical Characteristics tables)
1. The device is continuously selected. Chip Enable is held in its active state.
tRC
—
—
ns
6
2. The address is valid prior to or coincident with the latest occuring Chip Enable.
3. At any given temperature and voltage condition, tHZCE is less than tLZCE.
7 4. This parameter is sampled.
5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured ±200 mV from steady state voltage.
6. VCC = 5V ± 5%.
Ordering Information
XXXXX
Device Type
X
Power
XX
Speed
X
Package
Type
X
Process
Temp. Range
X
Preferred
Shipping
Container
Blank
TR
TY
Tubes
Tape & Reel
Tray
Blank
I
A
Commercial (0° to +70°C)
Industrial (–40°C to +85°C)
Automotive ( –40°C to +105°C)
SO
24-pin 300-mil Plastic SOJ
7
Commercial Only
8
10
12
15
SA
Standard Power
LA
Low Power
PDM41257 - 256K (256Kx1) Static RAM
8
9
10
11
12
Faster Memories for a Faster World ™
Rev. 2.2 - 4/27/98
7
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