AM1214-325 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

AM1214-325

RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS

STMicroelectronics 

AM1214-325

RF & MICROWAVE TRANSISTORS

L-BAND RADAR APPLICATIONS

........ REFRACTORY/GOLD METALLIZATION

EMITTER SITE BALLASTED

5:1 VSWR CAPABILITY

LOW THERMAL RESISTANCE

INPUT/OUTPUT MATCHING

OVERLAY GEOMETRY

METAL/CERAMIC HERMETIC PACKAGE

POUT = 325 W MIN. WITH 6.4 dB GAIN

.400 x .500 2LFL (S038)

hermetically sealed

ORDER CODE

AM1214-325

BRANDING

1214-325

DESCRIPTION

The AM1214-325 device is a high power transistor

specifically designed for L-Band radar pulsed out-

put and driver applications.

This device is designed for operation under moder-

ate pulse width and duty cycle pulse conditions

and is capable of withstanding 5:1 VSWR at rated

RF conditions. Low RF thermal resistance and

computerized automatic wire bonding techniques

ensure high reliability and product consistency.

The AM1214-325 is supplied in the BIGPAC™ Her-

metic Metal/Ceramic package with internal

Input/Output matching structures.

PIN CONNECTION

1. Collector

2. Base

3. Emitter

4. Base

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symb ol

Pa ra met er

PDISS

Power Dissipation* (TC ≤ 100°C)

IC

Device Current*

VCC

Collector-Supply Voltage*

TJ

Junction Temperature (Pulsed RF Operation)

TSTG

Storage Temperature

Value

Unit

1250

W

25

A

45

V

250

°C

− 65 to +200

°C

THERMAL DATA

RTH(j-c) Junction-Case Thermal Resistance*

*Applies only to rated RF amplifier operation

0.10

°C/W

September 1992

1/4

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