Q67100-Q1044 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

Q67100-Q1044

256 K × 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM

Infineon Technologies 

HYB 514256B/BL/BJ/BJL-50/-60/-70

256 K × 4-DRAM

AC Characteristics (cont’d) 4) 13)

TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; tT = 5 ns

Parameter

Symbol

-50

min. max.

Row address setup time

tASR

Row address hold time

tRAH

Column address setup time tASC

Column address hold time tCAH

Column address to RAS lead tRAL

time

0–

10 –

0–

10 –

25 –

Read command setup time tRCS

Read command hold time

t 8)

RCH

Read command hold time

tRRH

referenced to RAS

8)

0–

0–

0–

Write command hold time

tWCH

Write command pulse width tWP

Write command to RAS lead tRWL

time

10 –

10 –

15 –

Write command to CAS lead tCWL

time

15 –

Data setup time

Data hold time

Refresh period

Refresh period

L-version

t 9)

DS

t 9)

DH

tREF

tREF

0–

10 –

–8

– 64

Write command setup time 10) tWCS

CAS to WE delay time

t 10)

CWD

RAS to WE delay time

t 10)

RWD

Column address to WE delay tAWD

time

10)

0–

40 –

75 –

50 –

CAS setup time (CAS-before- tCSR

RAS cycle)

5–

CAS hold time (CAS-before- tCHR

RAS cycle)

10 –

RAS to CAS precharge time tRPC

0–

Limit Values

-60

min. max.

0–

10 –

0–

15 –

30 –

-70

min. max.

0–

10 –

0–

15 –

35 –

0–

0–

0–

0–

0–

0–

10 –

10 –

15 –

15 –

15 –

20 –

15 –

20 –

0–

15 –

–8

– 64

0–

15 –

–8

––

0–

45 –

90 –

60 –

0–

50 –

100 –

65 –

5–

5–

15 –

15 –

0–

0–

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ms

ms

ns

ns

ns

ns

ns

ns

ns

Semiconductor Group

62

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