AM29LV160BB-70RSK View Datasheet(PDF) - Advanced Micro Devices

Part Name

Description

Manufacturer

AM29LV160BB-70RSK

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

Am29LV160B

16 Megabit (2 M x 8-Bit/1 M x 16-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

This product has been retired and is not recommended for designs. For new and current designs, S29AL016D supersedes Am29LV160B and is the factory-recommended migration path.

Please refer to the S29AL016D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

■ Manufactured on 0.32 µm process technology

■ High performance

— Full voltage range: access times as fast as 80 ns

— Regulated voltage range: access times as fast as

70 ns

■ Ultra low power consumption (typical values at

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 9 mA read current

— 20 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

thirty-one 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

thirty-one 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

— A hardware method of locking a sector to prevent any

program or erase operations within that sector

— Sectors can be locked in-system or via programming

equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing

multiple program command sequences

■ Top or bottom boot block configurations

available

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Minimum 1,000,000 write cycle guarantee

per sector

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

■ CFI (Common Flash Interface) compliant

— Provides device-specific information to the

system, allowing host software to easily

reconfigure for different Flash devices

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program

or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion (not available

on 44-pin SO)

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21358 Rev: H Amendment/4

Issue Date: June 6, 2005

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