AM29LV160BB70RSCB View Datasheet(PDF) - Advanced Micro Devices
Part Name
Description
Manufacturer
AM29LV160BB70RSCB
Advanced Micro Devices
AM29LV160BB70RSCB Datasheet PDF : 48 Pages
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REVISION SUMMARY
Revision F
Distinctive Characteristics
Changed typical read and program/erase current
specifications.
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Figure 2, In-System Sector Protect/Unprotect
Algorithms (0.35 µm devices)
Corrected A6 to 0, Changed wait specification to 150 µs
on sector protect and 15 ms on sector unprotect.
DC Characteristics
Changed typical read and program/erase current
specifications.
AC Characteristics
Alternate CE# Controlled Erase/Program Operations:
Changed tCP to 35 ns for 70R, 80, and 90 speed
options.2w
Erase and Programming Performance
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Physical Dimensions
Corrected dimensions for package length and width in
FBGA illustration (standalone data sheet version).
Revision F+1
Table 9, Command Definitions
Corrected the byte-mode address in the sixth write
cycle of the chip erase command sequence to AAAh.
Revision F+2
Figure 2, In-System Sector Protect/Unprotect
Algorithms (0.35 µm devices)
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor?” back to setting up the next sector address.
DC Characteristics
Changed ICC1 test conditions and Note 1 to indicate
that OE# is at VIH for the listed current.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations: Corrected the notes refer-
ence for tWHWH1 and tWHWH2. These parameters are
100% tested. Corrected the note reference for tVCS.
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for tVIDR. This parameter is not
100% tested.
Figure 23, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cycles.
Revision G
Global
Added 70R speed option, changed 80R speed option
to 80.
Distinctive Characteristics
Changed process technology to 0.32 µm.
DC Characteristics
Moved VCCmax test condition for ICC specifications
to notes.
Connection Diagrams
Corrected the reverse TSOP drawing to show orienta-
tion and pin 1 indicators.
Distinctive Characteristics
Added 20-year data retention bullet.
Connection Diagrams
Updated FBGA figure.
Ordering Information
Changed FBGA package reference to FBC048;
addded FBGA package marking information.
Physical Dimensions
Changed drawing to FBC048.
Revision G+1
Connection Diagrams
FBGA: Corrected to indicate that diagram shows the
top view, balls facing down.
Command Definitions Table
Corrected the address in the sixth cycle of the chip
erase sequence to AAAh.
Trademarks
Copyright © 1999 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of
Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for iden-
tification purposes only and may be trademarks of their respective companies.
Am29LV160B
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