AM29LV200BT-70RDPC View Datasheet(PDF) - Advanced Micro Devices

Part Name

Description

Manufacturer

AM29LV200BT-70RDPC

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1

Advanced Micro Devices 

SUPPLEMENT

Am29LV200B Known Good Die

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— 2.7 to 3.6 volt read and write operations for

battery-powered applications

■ Manufactured on 0.32 µm process technology

■ High performance

— 60R, 70, 90, 120 ns access time

■ Low power consumption (typical values at

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

seven 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

seven 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing

multiple program command sequences

■ Top or Bottom boot block configuration

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Minimum 1,000,000 write cycle guarantee

per sector

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program

or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

■ 20-year data retention at 125°C

■ Tested to datasheet specifications at

temperature

■ Quality and reliability levels equivalent to

standard packaged components

■ 500 µm or 280 µm die thickness shipping options

Publication# 26014 Rev: A Amendment/+2

Issue Date: November 18, 2003

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