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RMPA29000 View Datasheet(PDF) - Raytheon Company

Part Name
Description
Manufacturer
RMPA29000
Raytheon
Raytheon Company Raytheon
RMPA29000 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
RMPA29000
27–30 GHz 1 Watt Power
Amplifier MMIC
Figure 2
Chip Layout and Bond Pad
Locations
(Chip Size=5.210 mm x
2.946 mm x 50 µm. Back of
Chip is RF and DC Ground)
Dimensions in mm
2.946
2.672
1.651
1.461
1.285
PRODUCT INFORMATION
Figure 3
Recommended
Application Schematic
Circuit Diagram
0.254
0.0
0.122 0.236
Bond Wire Ls
MMIC Chip
Drain Supply (Vd= +5 V)
(Connect to both VDA & VDB)
10000pF
L
100pF
L
RF IN
4.445
5.210
5.072
RF OUT
Ground
(Back of Chip)
100pF
L
L10000pF
Bond Wire Ls
www.raytheon.com/micro
Gate Supply (Vg)
(VGA and/or VGB)
Characteristic performance data and specifications are subject to change without notice.
Revised January 18, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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