AO3415 View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

AO3415

P-Channel Enhancement Mode Field Effect Transistor

Unspecified 

Rev 3: May 2004

AO3415

P-Channel Enhancement Mode Field Effect Transistor

General Description

The AO3415 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications. It is ESD protected. AO3415 is Pb-free

(meets ROHS & Sony 259 specifications). AO3415L

is a Green Product ordering option. AO3415 and

AO3415L are electrically identical.

Features

VDS (V) = -20V

ID = -4 A

RDS(ON) < 43mΩ (VGS = -4.5V)

RDS(ON) < 54mΩ (VGS = -2.5V)

RDS(ON) < 73mΩ (VGS = -1.8V)

ESD Rating: 3000V HBM

TO-236

(SOT-23)

Top View

G

D

S

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current A

TA=70°C

ID

Pulsed Drain Current B

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

-20

±8

-4.0

-3.5

-30

1.4

0.9

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

65

85

Maximum Junction-to-Lead C

Steady-State

RθJL

43

Max

90

125

60

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

Alpha & Omega Semiconductor, Ltd.

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