AO4404 View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

AO4404

N-Channel Enhancement Mode Field Effect Transistor

Unspecified 

AO4404

N-Channel Enhancement Mode Field

Effect Transistor

General Description

The AO4404 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and

operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in

PWM applications. The source leads are separated to allow a Kelvin connection to the source, which

may be used to bypass the source inductance.

Features

VDS (V) = 30V

ID = 8.5A

RDS(ON) < 24mΩ (VGS = 10V)

RDS(ON) < 30mΩ (VGS = 4.5V)

RDS(ON) < 48mΩ (VGS = 2.5V)

D

S

D

S

D

S

D

G

D

SOIC-8

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Maximum

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

±12

Continuous Drain TA=25°C

8.5

Current A

TA=70°C

ID

7.1

Pulsed Drain Current B

IDM

60

Power Dissipation

TA=25°C

TA=70°C

PD

3

2.1

Junction and Storage Temperature Range TJ, TSTG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

31

59

40

75

Maximum Junction-to-Lead C

Steady-State

RθJL

16

24

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

1/6

www.freescale.net.cn

Share Link: