AO4425 View Datasheet(PDF) - shenzhen wanhexing Electronics Co.,Ltd
Part Name
Description
Manufacturer
AO4425 Datasheet PDF : 4 Pages
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万和兴电子有限公司 www.whxpcb.com
AO4425
38V P-Channel MOSFET
General Description
The AO4425 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected.
Product Summary
VDS (V) = -38V
ID = -14A (VGS = -20V)
RDS(ON) < 10mΩ (VGS = -20V)
RDS(ON) < 11mΩ (VGS = -10V)
ESD Rating: 4000V HBM
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-38
±25
-14
-11
-50
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
26
50
40
75
Maximum Junction-to-Lead C
Steady-State
RθJL
14
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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