HGTG12N60B39A View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
HGTG12N60B39A Datasheet PDF : 8 Pages
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HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Typical Performance Curves Unless Otherwise Specified (Continued)
2.50
2.00
CIES
FREQUENCY = 1MHz
1.50
100
0.5
1.00
COES
0.50
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
0.2
0.1
10-1
0.05
0.02
t1
0.01
SINGLE PULSE
10-210-5
10-4
10-3
DUTY FACTOR, D = t1 / t2
PD
PEAK TJ = PD x ZθJC x RθJC + TC
t2
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
HGTP12N60B3D
RG = 25Ω
L = 1mH
+
-
VDD = 480V
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
VGE
VCE
ICE
90%
EOFF
10%
EON2
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 18. SWITCHING TEST WAVEFORMS
©2002 Fairchild Semiconductor Corporation
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
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