AO4924 View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
AO4924 Datasheet PDF : 9 Pages
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AO4924
Asymmetric Dual N-Channel MOSFET
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
8
VDS=15V
6
ID=9A
4
2
0
0
5
10
15
20
25
Qg (nC)
DYNAMIC PARFAigMurEeT7:EGRaSte-Charge Characteristics
2000
Ciss
1500
1000
500
Crss
Coss
0
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.00
10.00
RDS(ON)
limited
1.00
10s
0.10
TJ(Max)=150°C
TA=25°C
1ms
1s
10µs
100µ
DC
0.01
0.01
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
50
40
TJ(Max)=175°C
TC=25°C
30
20
10
0
0.0001 0.001 0.01 0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
1000
4/9
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