AOD446 View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
AOD446 Datasheet PDF : 6 Pages
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AOD446
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
75
V
IDSS
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
TJ=55°C
1
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1
2.4
3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
A
RDS(ON) Static Drain-Source On-Resistance
VGS=20V, ID=5A
VGS=10V, ID=5A
TJ=125°C
100 130
mΩ
180 220
105 140 mΩ
VGS=4.5V, ID=2A
120 165 mΩ
gFS
Forward Transconductance
VDS=5V, ID=10A
9
S
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.79 1
V
IS
Maximum Body-Diode Continuous Current
10
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
293 350 pF
51
pF
20
pF
2.2
3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
VGS=10V, VDS=37.5V, ID=5A
VGS=10V, VDS=37.5V, RL=7.5Ω,
RGEN=3Ω
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
5.2 6.5 nC
2.46 3.5 nC
1
nC
1.34
nC
4.6
ns
2.3
ns
14.7
ns
1.7
ns
25
30
ns
27
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev3: Sep 2008
2/6
www.freescale.net.cn
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