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4407GM View Datasheet(PDF) - Advanced Power Electronics Corp

Part Name
Description
Manufacturer
4407GM
A-POWER
Advanced Power Electronics Corp A-POWER
4407GM Datasheet PDF : 4 Pages
1 2 3 4
AP4407GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A
VGS=-4.5V, ID=-5A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
VDS=-10V, ID=-10A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= ± 25V
ID=-10.7A
Gate-Source Charge
VDS=-24V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-15V
Rise Time
ID=-1A
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=15Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance
f=1.0MHz
-30 -
-
- -0.015 -
V
V/
-
- 14 mΩ
-
- 20 mΩ
-1 - -3 V
-
13 -
S
-
- -1 uA
-
- -25 uA
-
- ±100 nA
- 29 46 nC
-
6
- nC
- 14 - nC
- 15 - ns
- 12 - ns
- 100 - ns
- 70 - ns
- 2600 4100 pF
- 500 - pF
- 370 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
IS=-10.7A, VGS=0V
IS=-10.7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- -1.2 V
- 31 - ns
- 25 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad.

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