AP7217A-33SG-13 View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
Manufacturer
AP7217A-33SG-13 Datasheet PDF : 10 Pages
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AP7217A
3.3V 600mA CMOS LDO
Electrical Characteristics
(TA = 25°C, CIN = 1µF, COUT = 1µF, VEN = VIN, unless otherwise noted)
Symbol
Parameter
Test Conditions
Min Typ. Max Unit
IQ
ISTB
VROUT
VDROPOUT
IOUT
Quiescent Current
Standby Current
Output Voltage
Accuracy
VOUT Temperature
Coefficient
Dropout Voltage
Maximum Output
Current
IO = 0mA
VEN = Off
VIN = 5.0V
IO = 30mA, VIN = 5V
-40°C to 85°C, IOUT = 30mA
IOUT = 300mA
IOUT = 600mA
VIN = 5.3V
-
50 80
μA
15 25
μA
3.234 3.300 3.366 V
±100
ppm / oC
350 400
mV
800 900
600
mA
ILIMIT
Current Limit
Ishort
Short Circuit Current
ΔVLINE/ΔVIN/VOUT Line Regulation
ΔVOUT
Load Regulation
VIN = 5.3V
VIN = 5.3V
4.3V ≤ VIN ≤ 5.5V; IOUT = 30mA
1mA ≤ IOUT ≤ 100mA, VIN = 5.3V
750
mA
50
mA
0.01 ±0.2 %/V
15 50
mV
PSRR
Power Supply
Rejection
VIN = 4.3V+ 0.5Vp-pAC,
IOUT = 50mA
F = 1KHz
55
dB
VEH
VEL
IEN
VDF
VD Hysteresis
Range
IVDout
tRP
θJA
θJC
EN Input Threshold
Enable Pin Current
Detect fall voltage
Output ON
Output OFF
VHysteresis
VD Supply Current
VDOUT Delay Time
Thermal Resistance
Junction-to-Ambient
Thermal Resistance
Junction-to-Case
VDout = 0.5V
VIN = 2.0V
3.0V
VIN = 1.8V to VDF+ 1V
SOP-8L (Note 3)
SOP-8L-EP (Note 4)
SOP-8L (Note 3)
SOP-8L-EP (Note 4)
1.6
V
0.25
V
-0.1
0.1
μA
3.23 3.3 3.37
V
VDF
VDF
VDF
x1.02 x1.05 x1.08
V
20
mA
30
180 200
-
mSec
134
ºC/W
82
28
ºC/W
12
Notes:
3. Test condition for SOP-8L: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
4. Test condition for SOP-8L-EP: Device mounted on 2oz copper, minimum recommended pad layout on top & bottom layer with thermal vias,
double sided FR-4 PCB.
AP7217A Rev. 1
4 of 10
www.diodes.com
APRIL 2008
© Diodes Incorporated
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