AP7217C View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

Manufacturer

AP7217C

1.25V 600mA CMOS LDO

Diodes Incorporated. 

AP7217C

1.25V 600mA CMOS LDO

Electrical Characteristics

(TA = 25°C, CIN= 1µF, COUT= 1µF, VEN= VIN, unless otherwise noted)

Symbol

Parameter

Test Conditions

IQ

ISTB

VOUT

Quiescent Current

Standby Current

Output Voltage

Accuracy

VOUT Temperature

Coefficient

IO = 0mA

VEN = Off

VIN = 5.0V

IO = 30mA, VIN = 5V

-40°C to 85°C, IOUT = 30mA

Min Typ. Max Unit

-

40 60

µA

2

5

µA

1.225 1.25 1.275 V

±100

ppm / oC

VDROPOUT

Dropout Voltage

IOUT = 100mA, VOUT = 1.25V

IOUT = 600mA, VOUT = 1.25V

1250

mV

2000

IOUT

Maximum Output

Current

VIN = 5.3V

600

mA

ILIMIT

Current Limit

VIN = 5.3V

750

mA

ISHORT

Short Circuit Current VIN = 5.3V

∆VLINE/∆VIN/VOUT Line Regulation

4.3V ≤ VIN ≤ 5.5V; IOUT = 30mA

∆VOUT

Load Regulation

1mA ≤ IOUT ≤ 100mA, VIN = 5.3V

70

mA

0.01 ±0.2 %/V

10 20 mV

PSRR

Power Supply

Rejection

VIN = 4.3V+ 0.5Vp-pAC,

IOUT = 50mA

F = 1KHz

55

dB

VEH

VEL

EN Input Threshold

Output ON

Output OFF

IEN

Enable Pin Current

θJA

Thermal Resistance

Junction-to-Ambient

SOP-8L-EP (Note 3)

1.6

V

0.25 V

-0.1

0.1 µA

82

ºC/W

θJC

Thermal Resistance

Junction-to-Case

SOP-8L-EP (Note 3)

12

ºC/W

Notes: 3. Test condition for SOP-8L-EP: Device mounted on 2oz copper, minimum recommended pad layout on top & bottom layer with thermal vias,

double sided FR-4 PCB.

AP7217C Rev. 3

DS31424

4 of 9

www.diodes.com

OCTOBER 2009

© Diodes Incorporated

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