RMPA29200 View Datasheet(PDF) - Raytheon Company
Part Name
Description
Manufacturer
RMPA29200 Datasheet PDF : 9 Pages
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RMPA29200
29-31 GHz 2 Watt Power Amplifier MMIC
Application
Information
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high
thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined,
finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution
including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded
to prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long
corresponding to a typically 2 mils gap between the chip and the substrate material.
Figure 1
Functional Block
Diagram
MMIC Chip
Gate Supply
Vg
RF IN
RF OUT
Figure 2
Chip Layout and Bond
Pad Locations
(Chip Size=4.000 mm
x 2.997 mm x 50 µm.
Back of Chip is RF and
DC Ground)
Dimensions in mm
Ground
(Back of Chip)
Drain Supply
Vd
2.997
2.812
2.714
1.692
1.492
1.292
www.raytheon.com/micro
0.0 0.454
1.422
2.513
Characteristic performance data and specifications are subject to change without notice.
Revised July 27, 2001
Page 2
0.270
0.172
0.0
3.891 4.000
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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