RMPA29200 View Datasheet(PDF) - Raytheon Company
Part Name
Description
Manufacturer
RMPA29200 Datasheet PDF : 9 Pages
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RMPA29200
29-31 GHz 2 Watt Power Amplifier MMIC
Figure 3
Recommended
Application Schematic and
Circuit Diagram
Gate Supply
(-Vg)
0.01µF
ADVANCED INFORMATION
100pF
Bond Wire Ls
RF IN
MMIC Chip
RF OUT
Ground
(Back of Chip)
100pF
100pF
100pF
0.01µF 0.01µF 0.01µF
Bond Wire Ls
Figure 4
Recommended
Assembly Diagram
5mil Thick
Alumina
50-Ohm
2 mil Gap
Drain Supply
(Vd=+5V)
Die-Attach
80Au/20Sn
5 mil Thick
Alumina
50-Ohm
www.raytheon.com/micro
RF
Input
RF
Output
L< 0.015”
(4 Places)
100pF
100pF
100pF
100pF
0.01µF
0.01µF
Vg
(Negative)
0.01µF
0.01µF
Vd
(Positive)
MMIC has Vg and Vd bias pads accessible on
both top and bottom sides. DC bias connections
are required only on one side.
Note: Use 0.003” x 0.0005” gold ribbon or 1 mil
gold wire for bonding. RF input and output bonds
should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
Revised July 27, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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