RMPA29200 View Datasheet(PDF) - Raytheon Company

Part Name

Description

Manufacturer

RMPA29200

29-31 GHz 2 Watt Power Amplifier MMIC

Raytheon Company 

RMPA29200

29-31 GHz 2 Watt Power Amplifier MMIC

ADVANCED INFORMATION

Recommended

Procedure

for Biasing and

Operation

CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE CORRESPONDING DRAIN VOLTAGE (Vd) IS PRESENT CAN

DAMAGE THE AMPLIFIER.

The following sequence must be followed to properly test the amplifier.

Step 1: Turn off RF input power.

Step 2: Connect the DC supply grounds to the ground of the

chip carrier.

Slowly apply negative gate bias supply voltage of

-1.5 V to Vg.

Step 3: Slowly apply positive drain bias supply voltage of

+5 V to Vd.

Step 4: Adjust gate bias voltage to set the quiescent current

of Idq=1500 mA.

Step 5: After the bias condition is established, the RF input

signal may now be

applied at the appropriate frequency band.

Step 6: Follow turn-off sequence of:

(i) Turn off RF Input Power

(ii) Turn down and off drain voltage (Vd).

(iii) Turn down and off gate bias voltage(Vg).

Performance

Data

RMPA29200 S21, S11, S22 Mag Vs. Frequency

Bias Vd=5V, Idq=1500mA, T=25°C

25

20

S21

15

10

5

0

S22

-5

-10

S11

-15

-20

20 22 24 26 28 30 32 34 36

Frequency (GHz)

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

Revised July 27, 2001

Page 4

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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