HYB3117805BJ-60 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

HYB3117805BJ-60

2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO)

Siemens AG 

2M x 8 - Bit Dynamic RAM

2k Refresh

(Hyper Page Mode- EDO)

HYB3117805BSJ -50/-60/-70

Advanced Information

• 2 097 152 words by 8-bit organization

• 0 to 70 °C operating temperature

• Performance:

tRAC

tCAC

tAA

tRC

tHPC

RAS access time

CAS access time

Access time from address

Read/Write cycle time

Hyper page mode (EDO)

cycle time

-50 -60 -70

50 60 70 ns

13 15 20 ns

25 30 35 ns

84 104 124 ns

20 25 30 ns

• Single + 3.3 V (± 0.3 V) supply

• Low power dissipation

max. 432 mW active (-50 version)

max. 396 mW active (-60 version)

max. 360 mW active (-70 version)

7.2 mW standby (LV-TTL)

3.6 mW standby (CMOS)

• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,

self refresh and test mode

• Hyper page mode (EDO) capability

• All inputs, outputs and clocks fully TTL-compatible

• 2048 refresh cycles / 32 ms (2k-Refresh)

• Plastic Package:

P-SOJ-28-3 400 mil

Semiconductor Group

1

1.96

Share Link: