HYB3117805BJ-60 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
HYB3117805BJ-60 Datasheet PDF : 25 Pages
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HYB3117805BSJ-50/-60/-70
2M x 8-EDO DRAM
The HYB 3117805BSJ is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB
3117805BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced
circuit techniques to provide wide operating margins, both internally and for the system user.
Multiplexed address inputs permit the HYB 3117805BSJ to be packaged in a standard SOJ 28
plastic package with 400 mil width. These packages provide high system bit densities and are
compatible with commonly used automatic testing and insertion equipment. System-oriented
features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic
device families such as Schottky TTL.
Ordering Information
Type
HYB 3117805BJ-50
HYB 3117805BJ-60
HYB 3117805BJ-70
Ordering Code Package
Q67100-Q1151 P-SOJ-28-3 400 mil
Q67100-Q1152 P-SOJ-28-3 400 mil
P-SOJ-28-3 400 mil
Descriptions
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
Pin Names
A0-A10
A0-A9
RAS
OE
I/O1-I/O8
CAS
WE
VCC
VSS
N.C.
Row Address Inputs
Column Address Inputs
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply (+ 3.3 V)
Ground (0 V)
not connected
Semiconductor Group
2
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