HYB3117805BJ-60 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
HYB3117805BJ-60 Datasheet PDF : 25 Pages
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HYB3117805BSJ-50/-60/-70
2M x 8-EDO DRAM
DC Characteristics
TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Average VCC supply current, during hyper page ICC4
mode EDO):
-50 ns version
–
70
-60 ns version
–
55
-70 ns version
–
45
(RAS = VIL, CAS, address cycling, tPC = tPC min.)
Standby VCC supply current
(RAS = CAS = VCC – 0.2 V)
ICC5
–
1
Average VCC supply current, during CAS-
ICC6
before-RAS refresh mode: -50 ns version
–
120
-60 ns version
–
110
-70 ns version
–
100
(RAS, CAS cycling, tRC = tRC min.)
Average Self Refresh Current
ICC7
_
1
(CBR cylce with tRAS>TRASSmin., CAS held low,
WE=Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
Unit Test
Condition
mA 2) 3) 4)
mA 2) 3) 4)
mA 2) 3) 4)
mA 1)
mA 2) 4)
mA 2) 4)
mA 2) 4)
mA
Capacitance
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3V , f = 1 MHz
Parameter
Input capacitance (A0 to A10)
Input capacitance (RAS, CAS, WE, OE)
I/O capacitance (I/O1-I/O8)
Symbol
CI1
CI2
CIO
Limit Values
min.
max.
–
5
–
7
–
7
Unit
pF
pF
pF
Semiconductor Group
6
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