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APTGF350SK60G View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
Manufacturer
APTGF350SK60G
Microsemi
Microsemi Corporation Microsemi
APTGF350SK60G Datasheet PDF : 6 Pages
1 2 3 4 5 6
Turn-On Delay Time vs Collector Current
35
30
VGE = 15V
25
Tj = 25°C
VCE = 400V
20
RG = 1.25
15
100
200
300
400
500
600
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
80
VCE = 400V
RG = 1.25
60
40
VGE =1 5V,
TJ=125°C
20
0
100
200
300
400
500
600
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
32
VCE = 400V
24
RG = 1.25
TJ=125°C,
16 VGE=15V
8
TJ=25°C,
VGE=15V
0
100 200 300 400 500 600
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
64
VCE = 400V
Eon, 720A
VGE = 15V
48 TJ= 125°C
Eoff, 720A
Eoff, 360A
32
Eon, 360A
Eoff, 180A
16
Eon, 180A
0
0
2
4
6
8
10 12
Gate Resistance (Ohms)
APTGF350SK60G
Turn-Off Delay Time vs Collector Current
250
200
VGE=15V,
TJ=125°C
150
100
VCE = 400V
RG = 1.25
VGE=15V,
T J=2 5°C
50
100 200 300 400 500 600
ICE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
80
60
TJ = 125°C
40
TJ = 25°C
20
VCE = 400V, VGE = 15V, RG = 1.25
0
100 200 300 400 500 600
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
24
VCE = 400V
20
VGE = 15V
RG = 1.25
16
TJ = 125°C
12
TJ = 25°C
8
4
0
100 200 300 400 500 600
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
40
VCE = 400V
VGE = 15V
32 RG = 1.25
Eon, 720A
24
Eoff, 720A
16 Eon, 360A
8
Eoff, 180A
Eoff, 360A
Eon, 180A
0
0
25
50
75
100 125
TJ, Junction Temperature (°C)
www.microsemi.com
5-6

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