ARF450 View Datasheet(PDF) - Advanced Power Technology
Part Name
Description
Manufacturer
ARF450 Datasheet PDF : 4 Pages
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DYNAMIC CHARACTERISTICS (per section)
Symbol Characteristic
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 150V
f = 1 MHz
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6 Ω
ARF450
MIN TYP MAX UNIT
980 1200
87
120
pF
25
40
5
10
3.0
7
ns
15
25
3
7
FUNCTIONAL CHARACTERISTICS (Push-Pull Configuration)
Symbol Characteristic
Test Conditions
GPS Common Source Amplifier Power Gain
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 10:1
f = 81.36 MHz
VGS = 0V VDD = 150V
Pout = 500W
MIN TYP MAX UNIT
12
13
dB
70
75
%
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Per each transistor side unless otherwise specified.
30
3000
Class C
25
VDD = 150V
Pout = 150W
Ciss
1000
20
500
Coss
15
100
10
Crss
50
5
0
30 45 60 75 90 105 120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
10
1
5 10
50
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
16
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
12
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
8
4
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
50
100us
OPERATION HERE
LIMITED BY RDS (ON)
10
5
1ms
10ms
1
0.5
TC =+25°C
TJ =+200°C
SINGLE PULSE
100ms
0.1
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
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