AS5030
Datasheet - Electrical Characteristics
6.6 Programming Parameters
Symbol
Parameter
Conditions
Min Typ Max Units
VPROG
Programming voltage
Static voltage at pin PROG
8.0
8.5
V
IPROG
Programming current
100
mA
TambPROG Programming ambient temperature
During programming
0
85
°C
tPROG
Programming time
Timing is internally generated
2
4
µs
VR,prog
VR,unprog
Analog readback voltage
During Analog Readback mode at pin PROG
2.2
0.5
V
3.5
6.7 DC Characteristics of Digital Inputs and Outputs
CMOS Inputs: CLK, CS, DIO, C1, C2
Symbol
Parameter
VIH
High level input voltage
VIL
Low level input voltage
ILEAK
Input leakage current
Conditions
Min Typ Max Units
0.7*VDD
V
0.3*VDD V
1
µA
CMOS Outputs: DIO, MagRngn, PWM, DX
Symbol
VOH
VOH
CL
Parameter
High level output voltage
Low level output voltage
Capacitive load
Conditions
Source current <4mA
Sink current <4mA
Min Typ
VDD-0.5
Max Units
V
0.4
V
35
pF
CMOS Tristate Output: DIO
Symbol
IOZ
Parameter
Tristate leakage current
Conditions
CS = low
Min Typ Max Units
1
µA
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