AT25D16-MH-B View Datasheet(PDF) - Atmel Corporation
Part Name
Description
Manufacturer
AT25D16-MH-B Datasheet PDF : 60 Pages
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AT25DF161 [Preliminary]
15.5 AC Characteristics – All Other Parameters (Continued)
Symbol Parameter
Min
tWPH(1)(3) Write Protect Hold Time
100
tSECP(1)
Sector Protect Time (from Chip Select High)
tSECUP(1) Sector Unprotect Time (from Chip Select High)
tLOCK(1)
Sector Lockdown and Freeze Sector Lockdown State Time (from Chip Select High)
tEDPD(1)
Chip Select High to Deep Power-Down
tRDPD(1)
Chip Select High to Standby Mode
tRST
Reset Time
Notes: 1. Not 100% tested (value guaranteed by design and characterization).
2. 15 pF load at frequencies above 70 MHz, 30 pF otherwise.
3. Only applicable as a constraint for the Write Status Register Byte 1 command when SPRL = 1.
Max Units
ns
20
ns
20
ns
200
µs
1
µs
30
µs
30
µs
15.6 Program and Erase Characteristics
Symbol
tPP(1)
tBP
Parameter
Page Program Time (256 Bytes)
Byte Program Time
tBLKE(1)
Block Erase Time
tCHPE(1)(2) Chip Erase Time
tSUSP
Suspend Time
4 Kbytes
32 Kbytes
64 Kbytes
Program
Erase
Min Typ Max Units
1.0
3.0
ms
7
µs
50
200
250 600 ms
400 950
16
28
sec
10
20
µs
25
40
tRES
Resume Time
Program
Erase
tOTPP(1)
OTP Security Register Program Time
tWRSR(2) Write Status Register Time
Note: 1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.
2. Not 100% tested (value guaranteed by design and characterization).
10
20
µs
12
20
200 500
µs
200
ns
15.7 Power-up Conditions
Symbol Parameter
tVCSL
tPUW
VPOR
Minimum VCC to Chip Select Low Time
Power-up Device Delay Before Program or Erase Allowed
Power-on Reset Voltage
Min Max Units
70
µs
10
ms
1.5
2.5
V
51
3687C–DFLASH–7/09
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