AT45DB321E View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

AT45DB321E

32-Mbit DataFlash (with Extra 1-Mbits), 2.3V Minimum SPI Serial Flash Memory

Unspecified 

AT45DB321E

32-Mbit DataFlash (with Extra 1-Mbits), 2.3V Minimum

SPI Serial Flash Memory

Features

 Single 2.3V - 3.6V supply

 Serial Peripheral Interface (SPI) compatible

 Supports SPI modes 0 and 3

 Supports RapidS™ operation

 Continuous read capability through entire array

 Up to 85MHz

 Low-power read option up to 15MHz

 Clock-to-output time (tV) of 6ns maximum

 User configurable page size

 512 bytes per page

 528 bytes per page (default)

 Page size can be factory pre-configured for 512 bytes

 Two fully independent SRAM data buffers (512/528 bytes)

 Flexible programming options

 Byte/Page Program (1 to 512/528 bytes) directly into main memory

 Buffer Write

 Buffer to Main Memory Page Program

 Flexible erase options

 Page Erase (512/528 bytes)

 Block Erase (4KB)

 Sector Erase (64KB)

 Chip Erase (32-Mbits)

 Program and Erase Suspend/Resume

 Advanced hardware and software data protection features

 Individual sector protection

 Individual sector lockdown to make any sector permanently read-only

 128-byte, One-Time Programmable (OTP) Security Register

 64 bytes factory programmed with a unique identifier

 64 bytes user programmable

 Hardware and software controlled reset options

 JEDEC Standard Manufacturer and Device ID Read

 Low-power dissipation

 400nA Ultra-Deep Power-Down current (typical)

 3μA Deep Power-Down current (typical)

 25μA Standby current (typical)

 11mA Active Read current (typical)

 Endurance: 100,000 program/erase cycles per page minimum

 Data retention: 20 years

 Green (Pb/Halide-free/RoHS compliant) packaging options

 8-lead SOIC (0.208" wide)

 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

 9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)

8784E–DFLASH–10/2013

Share Link: