ATF-38143 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
Manufacturer
ATF-38143 Datasheet PDF : 14 Pages
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ATF-38143 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
IDS
Pdiss
Pin max
TCH
TSTG
θjc
Parameter
Drain - Source Voltage[2]
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation[2]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance[3]
Units
V
V
V
mA
mW
dBm
°C
°C
° C/W
Absolute
Maximum
4.5
-4
-4
Idss
580
17
160
-65 to 160
165
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Source lead temperature is 25°C.
Derate 6␣ mW/ °C for TL > 64°C.
3. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
Product Consistency Distribution Charts
250
+0.6 V
200
150
0V
100
50
–0.6 V
0
0
1
2
3
4
5
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = -0.2 V per step)
300
250
200
-3 Std
150
+3 Std
Cpk = 1.59062
Stdev = 0.73 dBm
6 Wafers
Sample Size = 450
100
50
0
18
20
22
24
26
OIP3 (dB)
Figure 2. OIP3 @ 2 GHz, 2 V, 10 mA.
LSL=18.5, Nominal=21.99, USL=26.0
180
150
120
-3 Std
+3 Std
90
Cpk = 4.08938
Stdev = 0.03 dB
6 Wafers
Sample Size = 450
160
120
-3 Std +3 Std
80
Cpk = 2.58097
Stdev = 0.14 dB
6 Wafers
Sample Size = 450
60
40
30
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
NF (dB)
Figure 3. NF @ 2 GHz, 2 V, 10 mA.
LSL=0, Nominal=0.44, USL=0.85
0
15 15.5
16 16.5 17 17.5 18
GAIN (dB)
Figure 4. Gain @ 2 GHz, 2 V, 10 mA.
LSL=15.0, Nominal=16.06, USL= 18.0
Note:
Distribution data sample size is 450
samples taken from 6 different wafers.
Future wafers allocated to this product
may have nominal values anywhere within
the upper and lower spec limits.
Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production test
requirements. Circuit losses have been de-
embedded from actual measurements.
2
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