ATF-541M4 View Datasheet(PDF) - HP => Agilent Technologies
Part Name
Description
Manufacturer
ATF-541M4
HP => Agilent Technologies
ATF-541M4 Datasheet PDF : 16 Pages
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ATF-541M4 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Vgs
Operational Gate Voltage
Vds = 3V, Ids = 60 mA
V
0.4
0.58
Vth
Threshold Voltage
Vds = 3V, Ids = 4 mA
V
0.18
0.36
Idss
Saturated Drain Current
Vds = 3V, Vgs = 0V
µA
—
0.28
Gm
Transconductance
Vds = 3V, gm = ∆Idss/∆Vgs; mmho
230
398
∆Vgs = 0.75 – 0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = -3V
µA
—
—
NF
Noise Figure [1]
f = 2 GHz Vds = 3V, Ids = 60 mA
dB
—
0.5
Vds = 4V, Ids = 60 mA
dB
—
0.5
Gain
Gain [1]
f = 2 GHz Vds = 3V, Ids = 60 mA
dB
15.5
17.5
Vds = 4V, Ids = 60 mA
dB
—
18.1
OIP3
Output 3rd Order
f = 2 GHz Vds = 3V, Ids = 60 mA
dBm
33
35.8
Intercept Point[1]
Vds = 4V, Ids = 60 mA
dBm
—
35.9
P1dB
1dB Compressed
Output Power [1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
dBm
—
21.4
dBm
—
22.1
Notes:
1. Measurements obtained using production test board described in Figure 5.
Max.
0.75
0.52
5
560
200
0.9
—
18.5
—
—
—
—
—
Input
50 Ohm
Input
Output
50 Ohm
Output
Transmission
Matching Circuit
Matching Circuit
Transmission
Line Including
Γ_mag = 0.11
DUT
Γ_mag = 0.314
Line Including
Gate Bias T
Γ_ang = 141°
Γ_ang = -167°
Drain Bias T
(0.3 dB loss)
(0.5 dB loss)
(0.5 dB loss)
(0.3 dB loss)
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-
embedded from actual measurements.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Fmin
Minimum Noise Figure [2] f = 900 GHz Vds = 3V, Ids = 60 mA
dB
—
0.16
—
f = 2 GHz Vds = 3V, Ids = 60 mA
dB
—
0.46
—
f = 3.9 GHz Vds = 3V, Ids = 60 mA
dB
—
0.8
—
f = 5.8 GHz Vds = 3V, Ids = 60 mA
dB
—
1.17
—
Ga
Associated Gain [2]
f = 900 GHz Vds = 3V, Ids = 60 mA
dB
—
22.4
—
f = 2 GHz Vds = 3V, Ids = 60 mA
dB
—
18.7
—
f = 3.9 GHz Vds = 3V, Ids = 60 mA
dB
—
14.5
—
f = 5.8 GHz Vds = 3V, Ids = 60 mA
dB
—
11.9
—
OIP3
Output 3rd Order
f = 900 GHz Vds = 3V, Ids = 60 mA
dBm
—
35
—
Intercept Point[3]
Vds = 4V, Ids = 60 mA
dBm
—
35.1
—
f = 3.9 GHz Vds = 3V, Ids = 60 mA
dB
—
36.6
—
f = 5.8 GHz Vds = 3V, Ids = 60 mA
dB
—
37.6
—
P1dB
1dB Compressed
Output Power [3]
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dBm
—
dBm
—
dB
—
dB
—
19.5
—
20.8
—
20.4
—
19.4
—
Notes:
2. Fmin and associated gain at minimum noise figure (Ga) values are based on a set of 16 noise figure measurements made at 16 different impedances
using an ATN NP5 test system. From these measurements a true Fmin and Ga is calculated. Refer to the noise parameter application section for more
information.
3. P1dB and OIP3 measurements made in an InterContinental Microwave (ICM) test fixture with double stub tuners and bias tees. The input was tuned for
minimum noise figure and the output was tuned for maximum OIP3.
3
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